Features
l High-Reliability DFB Laser Chips
l 1550nm InGaAs PIN-PD as Receiver
l Low noise, Low distortion Low threshold current
l Integrated Optical Isolator
Applications
l CDMA/GSM transmission system
l CATV Return-path
l Other analog transmission system
l Access network, FTTC,FTTH, PON
Absolute Maximum ratings(Tc=25℃)
Parameter | Symbol | Ratings | Unit | Notes |
Reverse Voltage（LD） | Vr(LD) | 2 | V | CW |
Forward Current（LD） | If(LD) | 120 | mA | CW |
Reverse Voltage（MPD） | Vr(PD) | 15 | V | CW |
Forward Current（MPD） | If(PD) | 2 | mA | CW |
Storage Temperature | Tstg | -40~ +85 | ℃ | - |
Operating Temperature | Topr | -20~ +80 | ℃ | Ambient |
Lead Soldering Temperture/Time | Ts | 260/10 | ℃/S | - |
Fiber Yield Strength | - | 1 | kgf | - |
Fiber Bend Radius | - | 60 | mm | - |
Transmitter Optical And Electrical Characteristics
Parameter | Symbol | Min | Type | Max | Unit | Test Condition |
hreshold Current | Ith | 3 | - | 15 | mA | CW, T=25℃ |
- | - | 50 | mA | CW,T=85℃ | ||
Operating Voltage | Vf | - | 1.2 | 1.5 | V | |
Optical Output Power | Pf | 2 | - | - | mW | CW, If=30mA |
Center Wavelength | λc | λ-3 | λ | λ+3 | nm | CW, Po= Pf |
Rise/Fall Time(20-80%) | Tr/Tf | - | - | 0.2 | nS | If=Ith, Po=Pf, 50 Ohm |
Monitor Current | Im | 200 | - | 700 | uA | CW, If=30mA |
Capacitance | C | - | 10 | 15 | PF | VRD=5V, f=1MHz |
Dark Current | Id | - | - | 100 | nA | VRD=5V |
Spectral Width(-20dB) | Δλ | - | - | 1 | nm | CW, Po= Pf |
Bandwidth | BW | 2 | - | - | GHz | |
Slope Efficiency | SE | 0.08 | - | - | W/A | CW, Po= Pf |
Tracking Error | TE | -1.5 | - | 1.5 | dB | CW, Im=Constant & If=30mA |
Side Mode Suppression Ratio | SMSR | 30 | - | - | dB | CW, If=30mA |
Optical Isolation | Iso | 30 | - | - | dB | |
composite second-order beat |
CSO |
- |
- |
-50 |
dBc | 2 tone test, f1=2200MHz, f2=2202.5MHz, OMI=20%/tone, |
composite triple beat distortion |
CTB |
- |
- |
-60 |
dBc | 2 tone test, f1=2200MHz, f2=2202.5MHz, OMI=20%/tone, |
Relative Intensity Noise | RIN | - | - | -134 | dB/Hz |
Receiver Electrical And Optical Characteristics (Tc=25℃)
Parameter | Symbol | Min | Type | Max | Unit | Test Condition |
Detection range | λ | 1545 | 1550 | 1555 | nm | ISO(1525&1575>20dB) |
Responsivity | R | 0.8 | 0.85 | - | A/W | VR=12V，λ=1550nm |
Dark current | Id | - | - | 1.0 | nA | VR=5V，25°C |
Bandwidth(3dB) | BW | 2 | - | - | GHz | |
Saturation power | P | 3 | - | - | dBm | |
Capacitance | C | - | 0.6 | 1.0 | pF | VR=5V |
Rise and Fall time | Tr/Tf | - | 0.1 | - | ns | RL=50Ω |
IMD2 | IMD2 | - | -70 | - | dBc | λ=1550 nm, (1*) |
IMD3 | IMD3 | - | -80 | - | dBc | λ=1550nm, (1*) |
Reverse Voltage | VR | - | - | 30 | V | |
Return Loss | RL | 40 | - | - | dB |
Note：( 1* )P=2dBm，OMI=40%，Rload=50Ω, Vr=12V, Rx =1540~1560nm, IMD2: f1=450.25MHz，f2=400MHz，f1+f2=850.25MHz,f1-f2=50.25MHz; IMD3: 2f1-f2=500.5MHz.
kefu